학제간연구 | Interdisciplinary Studies in Gambling | 跨学科研究
- date : 2015-05-20 01:10|hit : 1401
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- Article] Investigation of range-energy relationships for low-energy electron beams in silicon and gallium nitride
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DocNo of ILP: 4091
Doc. Type: Article
Title: Investigation of range-energy relationships for low-energy electron beams in silicon and gallium nitride
Authors: Kurniawan, O; Ong, VKS
Full Name of Authors: Kurniawan, O.; Ong, V. K. S.
Keywords by Author: electron beam; electron range; Monte Carlo; generation volume
Keywords Plus: MONTE-CARLO CODE; C-LANGUAGE; STOPPING POWER; CROSS-SECTION; SOLID TARGETS; SIMULATION; TRANSPORT; CASINO; PENETRATION
Abstract: The electron beam technique of the Scanning Electron Microscopy (SEM) has been widely used for the characterization of bipolar devices and photodiode materials. The resolution of an electron beam technique is affected by the interaction of the beam and the specimen. The size of this interaction volume, commonly termed the generation volume, is usually characterized by what is called the electron penetration range and is measured from the surface. Since there is currently no consensus on the expressions to use in the calculation of the electron range, this paper provides an analysis of the three most commonly used semiempirical expressions. They are the Gruen range, the universal curve of Everhart and Hoff, and the maximum range of Kanaya and Okayama. This analysis is done using data from the statistical method of Monte Carlo simulations. It was found that the Everhart and Hoff universal curve performs better at low beam energies than the equation of Kanaya and Okayama. However, the validity of all the three expressions is questionable below 5 keV. In order to overcome this, fitted expressions based on the extrapolated range are provided for beam energies below 5 keV in the case of Si and GaN materials. The accuracy of these expressions is affected by the physical parameters used in the Monte Carlo simulations.
Cate of OECD: Other engineering and technologies
Year of Publication: 2007
Business Area: casino
Detail Business: casino
Country: USA
Study Area:
Name of Journal: SCANNING
Language: English
Country of Authors: [Kurniawan, O.; Ong, V. K. S.] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
Press Adress: Ong, VKS (reprint author), Nanyang Technol Univ, Sch Elect & Elect Engn, Nanyang Ave, Singapore 639798, Singapore.
Email Address: vo@pmail.ntu.edu.sg
Citaion:
Funding:
Lists of Citation: CASNATI E, 1982, J PHYS B-AT MOL OPT, V15, P155, DOI 10.1088/0022-3700/15/1/022; Chernyak L, 2001, SOLID STATE ELECTRON, V45, P1687, DOI 10.1016/S0038-1101(01)00161-7; Drouin D, 1997, SCANNING, V19, P20; EVERHART TE, 1971, J APPL PHYS, V42, P5837, DOI 10.1063/1.1660019; Goldstein J., 1975, PRACTICAL SCANNING E; Gruen A.E., 1957, Z NATURFORSCH A, V12, P89; HOLT D, 1989, SEM MICROCHARACTERIZ; Hovington P, 1997, SCANNING, V19, P29; Hovington P, 1997, SCANNING, V19, P1; Ivin VV, 2003, MICROELECTRON ENG, V69, P594, DOI 10.1016/S0167-9317(03)00351-4; JOY DC, 1989, SCANNING, V11, P176; KANAYA K, 1972, J PHYS D APPL PHYS, V5, P43, DOI 10.1088/0022-3727/5/1/308; Kuhr JC, 1999, PHYS STATUS SOLIDI A, V172, P433, DOI 10.1002/(SICI)1521-396X(199904)172:2<433::AID-PSSA433>3.0.CO;2-X; Leamy HJ, 1982, J APPL PHYS, V53, P51; LUKE KL, 1994, J APPL PHYS, V76, P1081, DOI 10.1063/1.357827; MARTINEZ JD, 1990, J APPL PHYS, V67, P2955; Norman C.E., 2001, SOLID STATE PHENOM, V78-79, P19; ONG VKS, 1994, SOLID STATE ELECTRON, V37, P1, DOI 10.1016/0038-1101(94)90096-5; Orton J. W., 1990, ELECT CHARACTERIZATI; Werner WSM, 2001, SURF INTERFACE ANAL, V31, P141, DOI 10.1002/sia.973
Number of Citaion: 20
Publication: JOHN WILEY & SONS INC
City of Publication: HOBOKEN
Address of Publication: 111 RIVER ST, HOBOKEN, NJ 07030 USA
ISSN: 0161-0457
29-Character Source Abbreviation: SCANNING
ISO Source Abbreviation: Scanning
Volume: 29
Version: 6
Start of File: 280
End of File: 286
DOI: 10.1002/sca.20070
Number of Pages: 7
Web of Science Category: Instruments & Instrumentation; Microscopy
Subject Category: Instruments & Instrumentation; Microscopy
Document Delivery Number: 240RD
Unique Article Identifier: WOS:000251603800006
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